15N120 1200V Fast IGBT Power Transistor

Specification

• Collector-emitter voltage: 1200V
• Gate-emitter voltage: ±20V
• Minimum gate-emitter threshold voltage: 4.5V
• Maximum gate-emitter threshold voltage: 8.5V
• Typical gate-emitter threshold voltage: 6.5V
• Collector to emitter saturation voltage: 1.9V to 2.3V (vary with temperature, current, and voltage conditions)
• Collector current
  • At 25℃: 30V
  • At 50℃: 15V
• Maximum pulsed collector current: 45A
• Diode continuous forward current: 15A
• Diode maximum forward current:  45A
• Collector cut-off current: 3mA
• Gate-emitter leakage current: ±250nA
• Rise time: 20ns
• Fall time: 100ns
• Storage and operating temperature: -55℃ to 150V