IRF630 200V 9A N-Channel Power MOSFET

Features

• Dynamic dv/dt capability
• Fully avalanche rated
• Advanced process technology
• Fast switching 
• Ease of paralleling
• Simple drive requirement 
• 175℃ operating temperature

Specification

• Drain-source voltage: 200V
• Drain-gate voltage: 200V
• Gate-source voltage: ±20V
• Continuous drain current:
  • At 25℃: 9.3A
  • At 100℃: 6.5A
• Pulsed drain current: 37A
• Maximum avalanche current: 9.3A
• Gate threshold voltage: 2V to 4V
• Drain-to-source leakage current: 25µA
• Gate-to-source forward leakage: 100nA
• Gate-to-source reverse leakage: -100nA
• Rise time: 14nS
• Fall time: 15nS
• Turn-on delay time: 7.9nS
• Turn-off delay time: 27nS
• Diode forward voltage: 1.3V
• Reverse recovery time: 117ns to 176ns
• Reverse recovery charge: 542nC to 813nC
• Maximum power dissipation: 82W
• Operating temperature: -55℃ to 175℃