IRFI644 250V 7.9A N-Channel Power MOSFET

Features

• Dynamic dv/dt capability
• Low thermal resistance
• Isolated package
• High voltage isolation: 2.5KVRMS
• Sink to lead creepage dist. 4.8mm

Specification

• Drain-source voltage: 250V
• Drain-gate voltage: 250V
• Gate-source voltage: ±20V
• Continuous drain current:
  • At 25℃: 7.9A
  • At 100℃: 5A
• Pulsed drain current: 32A
• Avalanche current: 7.9A
• Maximum power dissipation: 180W
• Operating temperature: -55℃ to 150℃