25N120 1200V Fast IGBT Power Transistor

25N120 is a high voltage and high current IGBT and can switch up to 1200V and 50A current. It is manufactured with NPT (Non Punch Through) trench technology because of that it has very low switching loss and low saturation voltage that makes it compatible to use in low voltage switching driver designs and get comparatively high efficiency for its switching range. It has a very low gate saturation gate voltage of 2V that makes it suitable to use in low voltage side drivers design. This IGBT is perfect for resonant and soft-switching applications like induction heating, microwave oven, etc. 

Features

• NPT trench technology
• Positive temperature coefficient
• Superior conduction and switching performance, high avalanche ruggedness, and easy parallel operation
• High voltage and current device
• Can handle current spike up to 90A 
• Low switching loss and saturation voltage

Specification

• Collector-emitter voltage: 1200V
• Gate-emitter voltage: ±20V
• Minimum gate-emitter threshold voltage: 3.5V
• Maximum gate-emitter threshold voltage: 7.5V
• Typical gate-emitter threshold voltage: 5.5V
• Collector to emitter saturation voltage: 2V to 2.65V (vary with temperature, current, and voltage conditions)
• Collector current
  • At 25℃: 50V
  • At 50℃: 25V
• Maximum pulsed collector current: 90A
• Diode continuous forward current: 25A
• Diode maximum forward current:  150A
• Collector cut-off current: 3mA
• Gate-emitter leakage current: ±250nA
• Rise time: 60ns
• Fall time: 100ns
• Storage and operating temperature: -55℃ to 150V

Application

• High current and voltage switching application
• Resonant and soft switching applications like induction heating, microwave oven, etc
• Tesla coils
• Inverter and converter circuits