BS170 200V 250mA Small Signal N-Channel MOSFET

BS170 is an N-Channel Metal-Oxide-Semiconductor-Field-Effect-Transistor or MOSFET. It has a TO-92 package with 200V and 250mA ratings. Its synonym is Metal-Insulated-Semiconductor-Field-Effect-Transistor or MISFET.

Specification

• Drain-source voltage: 200V
• Continuous gate-source voltage: ±20
• Continuous drain current: 250mA
• Pulsed drain current: 500mA
• Power dissipation: 350mW
• Typical turn-on time: 6 to 15 ns
• Typical turn-off time: 12 to 15 ns

Application

• Switching and amplification

Instruction

• Exceeding the maximum limit of rating may damage the device
• Power dissipation of the device may result in lower continuous drain current