IRF510 100V 5.6A N-Channel Power MOSFET

Features

• Dynamic dv/dt capability
• Fully avalanche rated
• Ultra low on-resistance
• Ease of paralleling
• Simple drive requirement 
• 175℃ operating temperature

Specification

• Drain-source voltage: -55V
• Drain-gate voltage: -55V
• Gate-source voltage: ±20V
• Continuous drain current:
  • At 25℃: 5.6A
  • At 100℃: 4A
• Pulsed drain current: 20A
• Maximum avalanche current: 5.6A
• Gate threshold voltage: 2V to 4V
• Drain-to-source leakage current: 25µA
• Gate-to-source forward leakage: 100nA
• Gate-to-source reverse leakage: -100nA
• Rise time: 16nS
• Fall time: 9.4nS
• Turn-on delay time: 6.9nS
• Turn-off delay time: 15nS
• Diode forward voltage: 2.5V
• Reverse recovery time: 100ns to 200ns
• Reverse recovery charge: 0.44µC to 0.88µC
• Maximum power dissipation: 43W
• Operating temperature: -55℃ to 175℃