IRF620 200V 5.2A N-Channel Power MOSFET

Features

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements

Specification

• Source-drain voltage: 200V
• Gate-to-source voltage: ±20V
• Continuous drain current
  • At 25℃: 5.2A
  • At 100℃: 3.3A
• Pulsed drain current: 18A
• Drain-to-source breakdown voltage: 200V
• Gate threshold voltage: 2V to 4V
• Diode forward voltage: 1.8V
• Turn-on delay time: 7.2ns
• Rise time: 22ns
• Turn-off delay time: 19ns
• Fall time: 13ns
• Reverse recovery time: 150ns to 300ns
• Reverse recovery charge: 0.91µC to 1.8µC