IRF730 200V 5.5A N-Channel Power MOSFET

Features

• Externally high dV/dt capability 
• 100% avalanche tested
• Very low intrinsic capacitance
• Gate charge minimized

Specification

• Gate-to-source voltage: ±20V
• Continuous drain current
  • At 25℃: 5.5A
  • At 100℃: 3.5A
• Pulsed drain current: 22A
• Drain-source voltage: 400V
• Drain gate voltage: 400V
• Drain-to-source breakdown voltage: 400V
• Gate threshold voltage: 2V to 4V
• Turn-on delay time: 11.5ns
• Rise time: 7.5ns
• Turn-off delay time: 9.5ns
• Fall time: 9ns
• Reverse recovery time: 300ns
• Reverse recovery charge: 2C
• Operating and storage junction temperature: -55℃ to 150℃