IRF9520 100V 6.8A P-Channel Power MOSFET

Features

• Dynamic dv/dt capability
• Advanced process technology
• Fully avalanche rated
• Fast switching
• 175℃ operating temperature

Specification

• Drain-source voltage: -100V
• Drain-gate voltage: -100V
• Gate-source voltage: ±20V
• Continuous drain current:
  • At 25℃: -6.8A
  • At 100℃: -4.8A
• Pulsed drain current: -27A
• Maximum avalanche current: -4A
• Gate threshold voltage: -2V to -4V
• Drain-to-source leakage current: -25µA
• Gate-to-source forward leakage: -100nA
• Gate-to-source reverse leakage: 100nA
• Rise time: 47nS
• Fall time: 31nS
• Turn-on delay time: 14nS
• Turn-off delay time: 28nS
• Diode forward voltage: -1.6V
• Reverse recovery time: 100ns to 150ns
• Reverse recovery charge: 420nC to 630nC
• Maximum power dissipation: 48W
• Operating temperature: -55℃ to 175℃