IRF9530 100V 14A P-Channel Power MOSFET

Features

• Dynamic dv/dt capability
• Advanced process technology
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirement
• 175℃ operating temperature

Specification

• Drain-source voltage: -100V
• Drain-gate voltage: -100V
• Gate-source voltage: ±20V
• Continuous drain current:
  • At 25℃: -12A
  • At 100℃: -8.2A
• Pulsed drain current: -48A
• Maximum avalanche current: -12A
• Gate threshold voltage: -2V to -4V
• Drain-to-source leakage current: -100µA
• Gate-to-source forward leakage: 100nA
• Gate-to-source reverse leakage: -100nA
• Rise time: 52nS
• Fall time: 39nS
• Turn-on delay time: 12nS
• Turn-off delay time: 31nS
• Diode forward voltage: -6.3V
• Reverse recovery time: 120ns to 240ns
• Reverse recovery charge: 0.46µC to 0.96µC
• Maximum power dissipation: 88W
• Operating temperature: -55℃ to 175℃