IRF9Z24 60V 11A P-Channel Power MOSFET

Features

• Dynamic dv/dt capability
• Advanced process technology
• Fully avalanche rated
• Fast switching

Specification

• Drain-source voltage: 55V
• Drain-gate voltage: 55V
• Gate-source voltage: ±20V
• Continuous drain current:
  • At 25℃: 17A
  • At 100℃: 12A
• Pulsed drain current: 68A
• Maximum avalanche current: 10A
• Gate threshold voltage: 2V to 4V
• Drain-to-source leakage current: 25µA
• Gate-to-source forward leakage: 100nA
• Gate-to-source reverse leakage: -100nA
• Rise time: 34nS
• Fall time: 27nS
• Turn-on delay time: 4.9nS
• Turn-off delay time: 19nS
• Maximum power dissipation: 45W
• Operating temperature: -55℃ to 175℃