IRFBG30 1000V 3.1A N-Channel Power MOSFET

Features

• Dynamic dv/dt capability
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirement

Specification

• Drain-source voltage: 1000V
• Drain-gate voltage: 1000V
• Gate-source voltage: ±20V
• Continuous drain current:
  • At 25℃: 3.1A
  • At 100℃: 2A
• Pulsed drain current: 12A
• Avalanche current: 3.1A
• Maximum power dissipation: 125W
• Operating temperature: -55℃ to 175℃